2sc4505 transistors rev.d 1/3 power transistor (400v, 0.1a) 2sc4505 z features 1) high breakdown voltage. (bv ceo = 400v) 2) low saturation voltage, typically v ce (sat) = 0.05v at i c / i b = 10ma / 1ma. 3) high switching speed, typically tf = 1.7 s at ic =100ma. 4) complements the 2sc4505 and the 2sa1759. z packaging specifications and h fe type 2sc4505 mpt3 pq 1000 t100 ce ? ? denotes h fe package h fe basic ordering unit (pieces) code marking z dimensions (unit : mm) mpt3 (1)base (2)collector (3)emitter 1.5 0.4 1.6 0.5 3.0 0.4 0.4 1.5 1.5 (3) (2) (1) 4.5 0.5 4.0 2.5 1.0 z absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 400 400 7 0.1 0.5 150 ? 55 to +150 unit v v v a (dc) 0.2 a (pulse) w w ? 1 ? 2 2 c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? 1 single pulse, pw = 20ms, duty = 1/2 ? 2 when mounted on a 40 40 0.7mm ceramic board. z electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob 400 400 7 ? ? ? 82 ? ? ? ? ? ? ? 0.05 ? 20 7 ? ? ? 10 10 0.5 270 ? ? v v v a a v ? mhz pf i c = 50 a i c = 1ma i e = 50 a v cb = 400v v eb = 6v i c /i b = 10ma/1ma v be(sat) ?? 1.5 v i c /i b = 10ma/1ma v ce = 10v , i c = 10ma v ce = 10v , i e =? 10ma , f = 10mhz v cb = 10v , i e = 0a , f = 1mhz t on ? 1 ? si c =? 100ma r l = 1.5k ? t stg ? 5.5 ? si b1 =? i b2 = 10ma t f ? 1.7 ? sv cc ~ ? 150v collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance base-emitter saturation voltage turn-on time storage time fall time
2sc4505 transistors rev.d 2/3 z electrical characteristics (ta=25 c) 02 4 6 810 40 80 120 160 200 collector current : i c (ma) collector to emitter voltage : v ce (v) 0 fig.1 ground emitter output characteristics ta =25 c i b = 0ma 0.5ma 1.0ma 1.5ma 2.0ma 2.5ma 3.0ma 3.5ma collector current : i c (a) base to emitter voltage : v be (v) 1.4 1.6 0.4 0.6 0.8 1.0 1.2 0.2 0 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 1 0.5 ta=100 c 25 c ? 25 c v ce = 3v fig.2 ground emitter propagation characterisitics fig.3 dc current gain vs. collector current ( ) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 dc current gain : h ef collector current : i c (a) 1 2 5 10 20 50 100 200 500 1000 v ce = 10v 5v ta =25 c fig.4 dc current gain vs. collector current ( ? ) dc current gain : h ef collector current : i c (a) 1 2 5 10 20 50 100 200 500 1000 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 v ce = 10v ? 25 c ta =100 c 25 c fig.5 collector-emitter saturation voltage vs. collector current 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 0.02 0.05 0.1 0.2 0.5 1 2 5 10 collector saturation voltage : v ce(sat) (v) collector current : i c (a) 0.01 i c /i b = 20 10 5 ta =25 c fig.6 collector-emitter saturation voltage collector-base saturation voltage vs. collector current 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 collector saturation voltage :v ce(sat) (v) base saturation voltage :v be(sat) (v) collector current : i c (a) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 v ce(sat) 100 c 25 c ? 25 c 25 c ta = ? 25 c ta =100 c i c / i b = 10 v be(sat) fig.7 gain bandwidth product vs. emitter current ? 0.005 ? 0.01 ? 0.02 ? 0.05 ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 2 10 20 50 100 200 500 5 1000 transition frequency : f t (mhz) emitter current : i e (a) 1 ta =25 c v ce = 10v fig.8 collector output capacitance vs. collector-base voltage 0.1 0.2 0.5 1 2 5 10 20 50 100 2 10 20 50 100 200 500 5 1000 collector output capacitance : c ob (pf) collector to base voltage : v cb (v) 1 ta =25 c f = 1mhz i e = 0a fig.9 safe operating area 0.1 1 10 100 1000 collector current : i c (a) collector to emitter voltage : v ce (v) 0.001 0.01 0.1 1 ic max. (pulse ? ) dc pw=100m pw=10m pw=1m ta =25 c ? single nonrepetitive pulse
2sc4505 transistors rev.d 3/3 ? v bb _ ~ 6v pw _ ~ 50 s duty cycle 1% ? v cc _ ~ 150v tut i b1 v in pw r l =1.5k ? i b2 base current wave form collector current wave form i b1 90% 10% i b2 i c t on t f t stg fig.10 switching time mesurement circuit
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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